Dr.N.B.Balamurugan

nbbalamurugan@tce.edu

Educational Qualification

DEGREE BRANCH INSTITUTE YEAR
B.E Electronics and Communication Engineering Thiagarajar College of Engineering,Madurai 1996
M.E Communication Systems Thiagarajar College of Engineering,Madurai 1998
PH.D Analog VLSI Device Modeling Anna University, Chennai 2009

Experience

PERIOD NO OF YEARS DESIGNATION INSTITUTION
02-01-1998 to 09-07-2004 6.6 Years Lecturer RVSCET, Dindigul
12-07-2004 to 30-11-2009 5.5 Years Lecturer TCE, Madurai
01-12-2009 to 02-06-2013 3.5 Assistant Professor TCE, Madurai
03-06-2013 to 23-03-22 8.8 Years Associate Professor TCE, Madurai
23-03-2022 to Till date 1 Professor TCE, Madurai

Journals

  1. Suguna M, Kaveri R, Hemalatha M, Balamurugan NB, Sriramkumar D, Dhanaselvam PS. Analytical modeling and Simulation Based Investigation of Triple material surrounding gate heterojunction tunnel FET. Silicon. 2022 Mar 16:1-2.
  2. V. charumathi, N.B Balamurugan, M suguna, M Hemlatha " Novel attributes and analog performance analysis of FINFET for high sensitive Biosensor, Silicon, (2022).
  3. Suguna M, Kaveri R, Sree VA, Hemalatha M, Balamurugan NB. Modeling and Simulation Based Investigation of Triple Material Surrounding Gate Tunnel FET for Low Power Application. Silicon. 2021 Sep 25:1-9.
  4. T.V Kumar, N.B.Balamurugan, "Three dimensional anayltical modeling for small-geomentry AIInSb/AISb/InSb double-gate high-electron mobility transistors(DG-HEMTs)", Journal of Computational Electronics, pp.1107-1115,2020.
  5. Dhanaselvam, P. Suveetha, Dr. N. B. Balamurugan. "Pressure Sensors Using Si/ZnO Heterojunction Diode." Silicon (2021)
  6. Manikandan, S., and N. B. Balamurugan. "A Physics Based Threshold Voltage Modeling of Trigate Junctionless FinFETs Considering Gaussian Doping." Silicon , 2021.
  7. G. Lakshmi Priya, N.B. Balamurugan, “Triple Material Surrounding Gate Junctionless Tunnel FET Based 6T SRAM Design for Low Leakage Memory System”, Silicon, 2021.
  8. M. Venkatesh and N.B.Balamurugan, “Influence of Threshold Voltage Performance Analysis on Dual Halo Gate Stacked Triple Material Dual Gate TFET for Ultra Low Power Applications,” Silicon, pp. 1–13, 2021.
  9. G. Lakshmi Priya, N.B. Balamurugan, “Investigation of Ambipolar conduction and RF stability performance in novel germanium source dual halo dielectric triple material surrounding gate TFET”, Silicon, pp. 911-918, 2021.
  10. M. Venkatesh, M. Suguna, and N.B. Balamurugan, “Influence of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET for Improved Analog/RF Performance,” Silicon, pp. 1–9, 2020.
  11. S. Manikandan, N.B. Balamurugan, “Analytical model of Double Gate Stacked junctionless transistor considering source/drain depletion effects for CMOS low power applications”, Silicon, pp. 2053-2063, 2020.
  12. S. Manikandan, N.B. Balamurugan, “The improved RF/stability and linearity performance of the ultrathin-body Gaussian-doped junctionless FinFET”, Journal of Computational Electronics, pp. 613-621, 2020
  13. Norio Takahashi, Vimala Palanichamy, NB Balamurugan, Analytical modeling of quantization effects in surrounding-gate MOSFETs, COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering.
  14. S Manikandan, NB Balamurugan, D Nirmal, Analytical model of double gate stacked oxide junctionless transistor considering source/drain depletion effects for CMOS low power applications, silicon-Springer, 1-11
  15. G Lakshmi Priya, NB Balamurugan, D Saraswathi, Impact of Electricfield Distribution on the performance of Dual Material Gate Work function Engineered Surrounding Gate Nanowire Tunnel FETs, International Journal of Applied Engineering Research, Vol 10, Issue 1, Pages 1018-1023
  16. V Palanichamy, NB Balamurugan, COMPARATIVE ANALYSIS OF QUANTUM EFFECTS IN NANO-SCALE MULTIGATE MOSFETS USING VARIATIONAL APPROACH, Journal of Engineering Science and Technology, Pages 224-234
  17. NB Balamurugan, C Priya, Effects of Roughness Scattering in Carrier Transport of Near Ballistic Silicon NanoWire MOSFET, Journal of Applied Mechanics & Materials, Issue 573.
  18. S.Preethi, Dr.N.B.Balamurugan, Analytical Modeling of Dual Material Surrounding Gate Junctionless MOSFET Using Finite Differentiation Method, Silicon- Springer, 2020
  19. M Venkatesh, M Suguna, NB Balamurugan, Subthreshold Performance Analysis of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel Field Effect Transistor for Ultra Low Power Applications,Journal of Electronic Materials 48 (10), 6724-6734
  20. S Manikandan, NB Balamurugan, TSA SamuelImpact of uniform and non-uniform doping variations for ultrathin body junctionless FinFETs,Materials Science in Semiconductor Processing 104, 104653
  21. Dharshana, NB Balamurugan, TS Samuel ,Journal of Nano Research ,2019,57, 68-76, “An Analytical Modeling and Simulation of Surrounding Gate TFET with an Impact of Dual Material Gate and Stacked Oxide for Low Power Applications”
  22. M.Venkatesh & N. B Balamurugan 2019,”New subthreshold performance analysis of germanium based dual halo gate stacked triple material surrounding gate tunnel field effect transistor”,Superlattices and Microstructures-Elsevier (130),485-498
  23. K Sowmya, NB Balamurugan,” Modeling and simulation of dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor using finite difference method January 2019International Journal of Numerical Modelling Electronic Networks Devices and Fields 32(1) DOI: 10.1002/jnm.2546
  24. K Sowmya, NB Balamurugan, V Parvathy,2019 “A 2-D MODELING OF Fe DOPED DUAL MATERIAL GATE Algan/Aln/Gan HIGH ELECTRON MOBILITY TRANSISTORS FOR HIGH FREQUENCY APPLICATIONS”AEU-International Journal Of Electronics And Communications
  25. G.Lakshmi Priya, N.B.Balamurugan,” New Dual Material Double Gate Junctionless Tunnel FET: Subthreshold Modeling and Simulation”, International Journal of Electronics and Communications (2018) https://doi.org/10.1016/j.aeue.2018.11.037
  26. Buvaneswari, B & Balamurugan, NB 2018, '2D analytical modeling and simulation dual material DG MOSFET for biosensing application', AEU-International Journal of Electronics and Communications.
  27. Buvaneswari, B & Balamurugan, NB 2018, ‘Sensitivity analysis of double gate metal oxide semiconductor field effect transistor for bio-sensing applications', Journal of Nanoelectronics and Optoelectronics.
  28. B. BUVANESWARI, N.B.Balamurugan, ”Comparative analytical analysis of various configurations of nanoscaled dielectric-modulated double gate MOSFET based biosensors” Journal of Optoelectronics and Advanced materials, Vol.20,no.9-10 Sep-Oct (2018).
  29. T. Venish kumar, N.B. Balamurugan ,” Analytical Modeling of InSb/AlInSb Heterostructure Dual gate High Electron Mobility Transistors” International Journal of Electronics and Communications (2018), doi: https://doi.org/10.1016/j.aeue.2018.06.033
  30. G.Lakshmi Priya, N.B.Balamurugan, “Subthreshold Modeling of Triple Material Gate-All-Around Junctionless Tunnel FET with Germanium and High-K Gate Dielectric Material” , Journal of Microelectronics, Electronic Components and Materials Vol. 48, No. 1(2018), 53 – 61
  31. Theodore Chandra, S, Balamurugan, NB, Lakshmi Priya, G & Manikandan, S 2015, ‘Analysis of Subthreshold Behavior of AlInSb/InSb High Electron Mobility Transistors (HEMTs)’, Chinese Physics B Impact Factor: 1.392, Vol. 24, No. 7 (2015) 076105 (1-5).
  32. Saraswathi D, Lakshmi Priya G, Balamurugan NB, Manikandan S, “A 2D Threshold Voltage Model for Triple Material Gate-All-Around Silicon Nanowire Tunnel FET”, International Journal of Applied Engineering and Research (ISSN 9734562), pp. 1376-1381, Vol.10, N0.2, 2015.
  33. D.Saraswathi , Dr.N.B.Balamurugan , and G.Lakshmi Priya, “Tri-Material Gate Work Function Engineering of Gate-AllAround (Gaa) Nanowire Tunnel Field Effect Transistors: Scale Length Model”, International Journal of Applied Engineering and Research, Volume 10, Number 2 (2015) pp. 3627-3638.
  34. P.Vanitha, Dr.N.B Balamurugan G. Lakshmi Priya “Triple Material Surrounding Gate (TMSG) Nanoscale Tunnel FET - Analytical Modeling and Simulation”, Journal of Semiconductor Technology and Science, ISSN 2233 – 4866,Vol.15,No.6,2015.
  35. Saraswathi D, Lakshmi Priya G, Balamurugan NB, Manikandan S, “Transconductance-to-Drain Current Ratio and Subthreshold Analysis of Tri-Material Gate-All-Around Silicon Nanowire Tunnel FET”, International Journal of Applied Engineering and Research (ISSN 9734562), pp. 1381-1387, Vol.10, N0.2, 2015.
  36. Theodore Chandra, S, Balamurugan, NB, Bhuvaneswari, M, Anbuselvan, N & Mohankumar, N 2015, ‘Analysis of Charge Density and Fermi Level of AlInSb/InSb Single Gate High Electron Mobility Transistor’, Journal of Semiconductors, vol. 36, no. 6, pp. 064003-1 - 064003-6
  37. G.Lakshmi Priya, N.B.Balamurugan, “Triple Material Gate Work Function Engineering in Surrounding Gate Nanoscale MOSFETs for reduced Short Channel Effects (SCE’s): Scale Length Model”, International Journal of ChemTech Research, vol.7, No.02, 2015, pp.1005-1013.
  38. Sheela. L, N. B. Balamurugan, S. Sudha and J. Jasmine, 'Analysis of Tunnelling Rate Effect on Single Electron Transistor',Journal of Electrical Engineering and Technology Vol. 9, No. 5: 1670-1676, 2014.
  39. M.Karthigai Pandian, Dr.N.B.Balamurugan and S. Manikandan, 'Analytical I-V Modeling of Accumulation Mode Cylindrical Surrounding Gate Nanowire Mosfets', International Journal of Applied Engineering and Research, Volume 9, Number 22 (2014) pp. 17745-17758.
  40. Theodore Chandra, S, Balamurugan, NB, Lakshmi Priya, G, Muralidharan, V, Sugirtha Ruba Rani, DS 2015, ‘Compact modeling of gate engineered triple material gate (TMG) AlInSb/InSb high electron mobility transistors’, Journal of Optoelectronics and Advanced Materials, vol.17, no.1-2, pp.222 - 228.
  41. Theodore Chandra, S, Balamurugan, NB, Bhuvaneswari, M, Anbuselvan, N & Mohankumar, N 2015, ‘Analysis of Charge Density and Fermi Level of AlInSb/InSb Single Gate High Electron Mobility Transistor’, Journal of Semiconductors, vol.36, no.6 Impact Factor: 0.378.
  42. P Suveetha Dhanaselvam, NB Balamurugan, and N Basheer Ahamed, ‘A Charge Control model of Surrounding gate MOSFET’, International Journal of Engineering and Computer science, vol. 2, no. 3, pp.777-780,2013.
  43. Theodore Chandra, S, Balamurugan, NB, Subalakshmi, G, Shalini, T & Lakshmi Priya, G 2014, ‘Compact analytical model for single gate AlInSb/InSb high electron mobility transistors’, Journal of Semiconductors, vol.35, no.11, pp.114003-1 to 114003-5 (ISSN: 1674-4926 Impact Factor: 0.378.
  44. TS Arun Samuel, NB Balamurugan, T Niranjana and B Samyuktha, ' Analytical Surface Potential model with TCAD Simulation verification for evalution of Surrounding Gate TFET' Journal of Electrical Engineering and Technology,Vol.9,No.2, 655-661,2013.
  45. M. Karthigai Pandian and N.B. Balamurugan, 'Analytical Threshold Voltage Modeling of Surrounding Gate Silicon Nanowire Transistors with Different Geometries', Journal of Electrical Engineering Technology Vol. 9, No. 6: 2079-2088, 2014.
  46. Theodore Chandra, S & Balamurugan, NB 2014, ‘Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k gate dielectric’, Journal of Semiconductors, vol.35, no.4, pp.044001-1 to 044001-4 .
  47. TS Arun Samuel, NB Balamurugan, 2014, ‘Analytical Modeling and Simulation of Germanium Single Gate Silicon on Insulator TFET’, Journal of Semiconductors, vol.3, in press.
  48. P Suveetha Dhanaselvam, & NB Balamurugan, N Basheer Ahamed, 2013, ‘A Charge Control model of Surrounding gate MOSFET’, International Journal of Engineering and Computer science, vol. 2, no. 3, pp.777-780.
  49. P Suveetha Dhanaselvam, & NB Balamurugan, Vivek Chakaravarthi, GC, Ramesh, RP & Sathishkumar, BR 2013, ’A 2D Analytical Modeling of Single halo Triple material Surrounding gate (SHTMSG) MOSFET’, Journal of Electrical Engineering & Technology, accepted for Publication.
  50. P Suveetha Dhanaselvam, & NB Balamurugan, 2013, ’Performance analysis of fully depleted triple material surrounding gate(TMSG) SOI MOSFET’, Journal of Computational Electronics, vol. 12, no. 4.
  51. P Suveetha Dhanaselvam, & NB Balamurugan, 2013, ‘A 2D Transconductance and Sub-threshold behavior model for triple material surrounding gate MOSFETs’, Microelectronics Journal, vol. 44, no. 12, pp. 1159-1164.
  52. TS Arun Samuel, NB Balamurugan, Sibitha,S, Saranya,R & Vanisri, D 2013, ‘Analytical Modeling and Simulation of Dual Material Gate Tunnel Field Effect Transistors’, Journal of Electrical Engineering & Technology, vol. 8, no. 6, pp. 1481-1486.
  53. P Suveetha Dhanaselvam, & NB Balamurugan, 2013, ‘Analytical approach of a nanoscale triple-material surrounding gate MOSFETs for reduced short channel effects’, Microelectronics Journal, vol. 44, no. 5, pp. 400-404.
  54. TS Arun Samuel, NB Balamurugan, Bhuvaneswari,S, Sharmila, D & Padmapriya, K 2013, ‘Analytical modelling and simulation of single-gate SOI TFET for low-power applications’, International Journal of Electronics, online.
  55. N.B.Balamurugan, An analytical 2D Model for a symmetric double gate MOSFET considering quantum mechanical effects, International journal of Micro and Nano systems, vol-2,pp.41-45,2011
  56. N.B.Balamurugan, Compact Thermal Noise modeling for Submicron MOSFETs , International Journal of Micro and Nano Electronics, Circuits And Systems, PP.43-47,Vol.3,2011
  57. N.B.Balamurugan, Modeling And Simulation Of Dual Material Surrounding Gate Nanoscale Soi Mosfets With Enhanced Transconductance To Drain Current Ratio For Wireless Communication, Journal Of Semiconductor Technology And Science, 2009, June.
  58. N.B.Balamurugan, New 2D Analytical Threshold Voltage Model For Dual Material Surrounding Gate Soi Mosfet For Low Power Applications, AMSE Journal, 2009, June.
  59. N.B.Balamurugan, New Scaling Theory For Effective Conducting Path Effect Of Dual Material Surrounding Gate Mosfet In Cmos Applications , AMSE Journal, 2009 June.
  60. N.B.Balamurugan, A New Scaling Theory For The Effective Conducting Path Effect Of Dual Material Surrounding Gate Nano Scale Mosfets, Journal Of Semiconductor Technology And Science, 2008 Vol. 8, No. 1, pp. 92-97
  61. N.B.Balamurugan, Two Dimensional Analytical Modeling Of Surface Potential And Threshold Voltage Of A Dual Material Surrounding Gate (Dmsg) Mosfets For Nanoscale Cmos Applications, International Journal Of Image Processing And Networking Techniques, 2008 Vol. 1, No. 1, pp. 89-96.
  62. N.B.Balamurugan, A Novel 2-D Model For The Surface Potential And Threshold Voltage Of Nanoscale Dual Material Surrounding Gate (Dmsg) Mosfets, International Engineering And Technology Journal Of Communication Techniques, 2008 Vol. 2, No. 1, pp. 1-7
  63. N.B.Balamurugan, An Analytical Modeling Of Threshold And Subthreshold Swing On Dual Material Surrounding Gate Nanoscale Mosfets For High Speed Wireless Communication, Journal Of Semiconductor Technology And Science, 2008 Vol. 8, No. 3, pp. 221-226
  64. N.B.Balamurugan, A Phenomenal Scaling Theory For The Effective Conductive Path Effect Of Dual Material Surrounding Gate (Dmsg) Nanoscale Mosfets, International Engineering And Technology Journal Of Communication Techniques, 2008 Vol. 2, No. 1, pp. 8-13.
  65. N.B.Balamurugan, Dual Material Surrounding Gate Nanoscale Mosfets: A Novel Device For Reliable Nanoscale Cmos Applications, Far East Journal Of Electronics And Communication, 2007 Vol. 1, No. 2, pp. 135-146.
  66. P.vimala & N. B. Balamurugan, “Modeling and Simulation of Centroid and Inversion charge density in Cylindrical Surrounding Gate MOSFETs including Quantum Effects”, Journal of Semiconductors, vol.34, no.11,pp. 114001-6, 2013.
  67. R Kaveri, V A nithya sree, M Hemalatha, Dr.N.B Balamurugan , Modeling and simulation based investigation of Triple Material Surrounding gate Tunnel FET for Low power application, Silicon,2021.
  68. P.vimala & N. B. Balamurugan, Modelling the centroid and charge density in double-gate MOSFETs including quantum effects, International Journal of Electronics, vol.100, no.9, pp.1283–1295, 2013.
  69. P.vimala & N.B.Balamurugan Quantum Mechanical Compact Modeling of Symmetric Double-Gate MOSFETs using Variational approach, Journal of Semiconductors, Vol. 33, No. 3, pp. 034001-1 to 034001-5,2012
  70. P.vimala & N.B.Balamurugan Analytical Modeling and Simulation of single gate SOI TFET for low power applications, International Journal of Electronics, pp.1–10.Available at online, 2013
  71. P.vimala & N.B.Balamurugan Analytical approach of a nanoscale triple material surrounding gate (TMSG) MOSFETs for reduced short channel effects, Microelectronics Journal, Volume 44, Issue 5, Pages 400–404, 2013
  72. TS Arun Samuel, NB Balamurugan, 2013, ‘An Analytical Modeling and Simulation of Dual Material Double Gate Tunnel Field Effect Transistor for Low Power Applications’, Journal of Electrical Engineering & Technology, vol. 9, no. 1, pp. 247-253.
  73. P.vimala & N. B. Balamurugan, “A Compact Quantum Model for Cylindrical Surrounding Gate MOSFETs using High-K Dielectrics”, Journal of Electrical Engineering
  74. P.vimala & N. B. Balamurugan, “A New Analytical model for Nanoscale Trigate SOI MOSFETs Including Quantum Effects”, IEEE Journal of the Electron Devices Society, Accepted. DOI: 10.1109/JEDS.2014.2298915.
  75. P.vimala & N. B. Balamurugan, “Modeling and simulation of nano scale Tri-gate MOSFETs including quantum effects”, Journal of Semiconductors, vol.35, no.3, 2014 in Forthcoming articles.
  76. P.vimala & N. B. Balamurugan, “Analytical Modeling of Quantum Effects in Surrounding Gate MOSFETs”, COMPEL- The International Journal for Computation and Mathematics in Electrical and Electronic Engineering Journal of Semiconductors, vol.33, no.1/2, 2014 in Early Cite Article.
  77. Theodore Chandra, S, Balamurugan, NB, Lakshmi Priya, G 2015, "Subthreshold behaviour of AlInSb/InSb high electron mobility transistor", Vol.24, No.7, pp 076105-1 to 076105-5.
  78. N.B.Balamurugan,Theodore Chandra,S., Suveeta,Vanitha,2D Analytical Surface Potential Model for Dual Material Gate MOSFETs with Reduced Short Channel EffectsInternational Journal of Science and Engineering Support Society18,49-58,2010
  79. N.B.Balamurugan, An Optimal Strategy For Analysing Characteristics Of Optical Fiber Waveguide , Journal Of Optics, 1997
  80. N.B.Balamurugan, Analytical approach of a nanoscale triple material surrounding gate (TMSG) MOSFETs for reduced short channel effects., Microelectronics Journal, Volume 44, Issue 5, Pages 400404
  81. N.B.Balamurugan, Analytical modeling of drain current, capacitance and transconductance in symmetric double-gate MOSFETs Considering quantum effects, International Journal of Nanoscience, Vol. 12, No. 1, 1350005 (9 pages)
  82. N.B.Balamurugan, Quantum Mechanical Compact Modeling of Symmetric Double-Gate MOSFETs using Variational approach, Journal of Semiconductors, Vol. 33, No. 3 pp. 034001-1 to 034001-5

Conferences

  1. Dr.N.B Balamurugan, " MULTIOBJECTIVE OPTIMIZATION OF TFETs WITH MACHINE LEARNING METHODS"35th International Conference on VLSI Design and 21st International Conference on Embedded Systems (VLSID 2022).
  2. Dr.N.B Balamurugan, A Novel Digit Parallel Multiplier for Elliptic curve cryptography, International conference on contemporary engineering and technology, 10th March 2021, Prince Shri Venkateshwara padmavathy engineering college, Chennai. India.
  3. Dr. N.B Balamurugan, Hardware Implementation of Vedic Arithmetic using Spartan-3E FPGA, International conference on contemporary engineering and technology, 11th March 2021, Prince Shri Venkateshwara padmavathy engineering college , chennai, India.
  4. Analyze the Behavior of Sub Threshold in Nanoscale Triple Material Gate AlGaN/GaN/AlN HEMT by analytical Modeling And Simulation,International Conference On Microwave and Optical Communication,2nd March 2017 ,Alagappa Chettiar College Of Engineering And Technology, Karaikudi.
  5. Analytical Modeling of Gate Engineered Triple Material Gate(TMG) AlGaN/GaN High Electron Mobility Transistors for CMOS ApplicationsInternational Conference on NextGen Electronic Technologies: Silicon to Software (ICNETS2),March 23, 2017 – VIT , Chennai, India
  6. Dr.N.B.Balamurugan, Analytical Modeling of Dual Material Gate All Around Stack Architecture of Tunnel FET, VLSID 2016,JANUARY 4 – 8 ,KOLKATTA, INDIA International 2016
  7. Dr.N.B.Balamurugan ,Analytical Modeling of Centroid and Gate Voltage in Quad gate MOSFET including Quantum Mechanical Efect, International Conference on Electrical,Electronics and Communication-(ICEEC’16) Alagappa Chettiar College of ENGG & TECH.,31st March-1st April 2016
  8. Dr.N.B.Balamurugan ,An Analytical study for the effect of gate engineering in Tri Material Gate All Around Junctionless MOSFETs,International Conference on Computing, Communication, Nanophotonics, Nanoscience, Nanomaterials and Nanotechnology I2C4N-2K16 Holy Grace Academy of Engg.,7-8th April,2016 Kerala,India. International2016
  9. Dr.N.B.Balamurugan ,Two Isolated Depletion Regions Analytical Model Of Sheet Carrier Density And Thershold Voltage For InAlAs/InGaAs Heterostructure Of HEMT. International Conference On Microwave and Optical Communication,2nd March 2017 ,Alagappa Chettiar College Of Engineering And Technology, Karaikudi.
  10. Dr.N.B.Balamurugan , Analyze the Behavior of Sub Threshold in Nanoscale Triple Material Gate AlGaN/GaN/AlN HEMT by analytical Modeling And Simulation,International Conference On Microwave and Optical Communication,2nd March 2017 ,Alagappa Chettiar College Of Engineering And Technology, Karaikudi.
  11. Dr.N.B.Balamurugan , A 2D Analytical Modeling Of Dual Material Surrounding Gate Junctionless Tunnel Field Effect Transistor,International Conference On Microwave and Optical Communication,2nd March 2017, Alagappa Chettiar College Of Engineering And Technology, Karaikudi.
  12. Dr.N.B.Balamurugan, Analytical Modeling of Gate Engineered Triple Material Gate(TMG) AlGaN/GaN High Electron Mobility Transistors for CMOS Applications,International Conference on NextGen Electronic Technologies: Silicon to Software (ICNETS2),March 23, 2017 – VIT , Chennai, India.
  13. Sheik Arafat, I & Balamurugan, NB 2016, ‘Influence of scattering in near ballistic silicon nanowire metal-oxide-semiconductor field effect transistor’, Journal of Nanoscience and Nanotechnology, Vol. 16, no. 6, pp.6032-6036 (ISSN 1533-4880)
  14. Sheik Arafat, I & Balamurugan, NB 2015, ‘Temperature effect in scattered SiNW MOSFET’, International Journal of Applied Engineering Research, Vol. 10, no. 55, pp. 123-127. (ISSN 0973-4562)
  15. Sheik Arafat, I, Balamurugan, NB 2014, ‘Role of Discrete Dopants in Carrier Transport of Near Ballistic Silicon NanoWire MOSFET’, Jokull Journal, Vol. 64, No.3 pp. 382-390
  16. Karthigai Pandian, M, Balamurugan, NB, & Manikandan, S 2014, ‘Analytical modeling of junctionless surrorunding gate silicon nanowire transistors’, Journal of Nanoelecronics and Optoelectronics, vol. 9, no. 4, pp. 468-473 (ISSN: 1555-1318)
  17. P Suveetha Dhanaselvam, & N.B.Balamurugan, “A 2D sub – threshold current model for single halo triple material surrounding gate (SHTMSG) MOSFETs”, Microelectronics Journal, 45 (2014) 574 – 577.
  18. Karthigai Pandian, M, & Balamurugan, NB 2014, ‘Anlytical threshold voltage modeling of surrorunding gate silicon nanowire transistors with different geometries’, Journal of Electrical Engineering & Technology, vol. 9, no. 6, pp. 2079-2088 (ISSN: 1975-0102)
  19. Karthigai Pandian, M, Balamurugan, NB, & Pricilla, A 2013, ‘Potential and quantum threshold voltage modeling of gate-all-around nanowire MOSFETs’, Active and Passive Electronic Components (ISSN: 1563-5031)
  20. P.Suveetha Dhanaselvam & N.B.Balamurugan, “A 2D Novel Approach of Partially Depleted Dual Material MOSFETs for Reduced Short Channel Effects”, Nanostructured Materials for Electronics, Energy and Environmental Applications,31 – 36 (2010)
  21. Balamurugan N.B., Sankaranarayanan K. and Fathima John .M, “2D Transonductance to Drain Current Ratio Modeling of Dual Material Surrounding Gate Nanoscale SOI MOSFETS”, Journal Of Semiconductor Technology And Science, vol. 9, no. 2, pp. 110-115,June 2009.
  22. Dr.N.B.Balamurugan "A Novel Scaling Theory for Effective Conductive Path Effect of Double gate (DG) MOSFETs for Nano – Scale CMOS Circuit Design",IEEE – International Conference on Signal Processing, Commnications and Networking, MIT, Anna Univeristy,Chennai,2008
  23. Dr.N.B.Balamurugan,M.Surya Abirami,K.Sowmya" Analytical Modeling of Centroid and Gate Voltage in Quad gate MOSFET including Quantum Mechanical Efect" International Conference on Electrical,Electronics and Communication-(ICEEC’16) Alagappa Chettiar College of ENGG & TECH.,31st March-1st April 2016
  24. Dr.N.B.Balamurugan, S.Manikandan An Analytical study for the effect of gate engineering in Tri Material Gate All Around Junctionless MOSFETs,International Conference on Computing,Communication,Nanophotonics,Nanoscience, Nanomaterials and Nanotechnology I2C4N-2K16 Holy Grace Academy of Engg.,7-8th April,2016 Kerala,India.
  25. Dr.N.B.Balamurugan, Shri Kalpa Virutcha, M.Radhika, M.MangalaBency, S.Elaswari "Comparitive Analysis of Dual Material Gate and Gate All Around Tunnel Field Effect Transistor for Low Power Applications" NCCT ’16 National conference on Communication Technologies, March- 23,2016MEPCO Schlenk Engineering College
  26. Dr.N.B.Balamurugan,M.Surya Abirami,B.Buvaneswari,K.Sowmya "Analytical Modeling of Nanoscale Quad gate MOSFET including Quantum Mechanical Effects" IEEE conference on Emerging Devices and smart system March 4 – 5 , 2016 ICEDSS2016 Mahendra Engineering College
  27. Dr.N.B.Balamurugan,Mr.S.Manikandan,Ms.G.Srimathi,Lakshmi Priya.G, "Analytical Modeling of Dual Material Gate All Around Stack Architecture of Tunnel FET,VLSI DESIGN 2016, Kolkatta,India, January 4 - 8, 2016. 29th International Conference on VLSI Design.
  28. Saraswathi D , Balamurugan N B, Lakshmi Priya G, Manikandan S,"A Compact Analytical Model for 2-D Triple Material Surrounding Gate Nanowire Tunnel Field Effect Transistors", ICICA'14, NIT Durgapur, Dec 22-24 2014. Published in proceedings of springer Intelligent Computing and Applications, vol.343.
  29. Vanitha P, Lakshmi Priya G, Balamurugan N B, Theodore Chandra S, Manikandan S,"Analytical Approach on the Scale Length Model for Triple Material Surrounding Gate Tunnel Field Effect Transistors (TMSG – TFET’s)", ICICA'14, NIT Durgapur, Dec 22-24 2014. Published in proceedings of springer Intelligent Computing and Applications, vol.343.
  30. N.B.Balamurugan, An Analytical 2D model for a Symmetric Double Gate MOSFET considering Quantum Mechanical Effects, ICCOS’11, Karunya university, Coimbatore, 17th to 18th Mar2011
  31. N.B.Balamurugan, Performance analysis and threshold voltage modeling of surrounding gate Silicon Nanowire Transistors, ICEVENT 2013SKP Engg. College,Thiruvannamalai.7th ,8th
  32. N.B.Balamurugan FPGA Synthesis of SIRM Fuzzy System Classication of Diabetil Epilepsy Risk Level, ICMOC 2012Noorul Islam Centre for higher Education. 10th and 11th April 2012
  33. N.B.Balamurugan, Electrical Characteristics of silicon and Germanium Nanowire transistors-A simulation study, CODIS 2012Jadavpur University, Kolkata 28th and 29th Dec 2012
  34. N.B.Balamurugan Quantum Centroid Modeling for Surrounding Gate MOSFETs, CODIS 2012Jadavpur University, Kolkata28th and 29th Dec 2012
  35. N.B.Balamurugan, Modeling the Inversion Charge Centroid in Tri-Gate MOSFETs including Quantum Effects, ICEVENT 2013SKP Engg. College,Thiruvannamalai.7th ,8th
  36. N.B.Balamurugan, High performance double gate Silicon Nanowire Transistors, ICEVENT 2013SKP Engg. College,Thiruvannamalai.7th ,8th
  37. N.B.Balamurugan, Potential and Electric field model for 18nm SG Tunnel Field Effect Transistor, ICEVENT 2013SKP Engg. College,Thiruvannamalai.7th ,8th
  38. N.B.Balamurugan, Parameter Extraction for single electron transistor based on master equation approach , ICEVENT 2013SKP Engg. College,Thiruvannamalai.7th ,8th
  39. N.B.Balamurugan, Modeling the Centroid and Charge density in Double Gate MOSFETs including Quantum Effects, ICANN-2011,IIT Guwahati, 8th to 10th Dec 2011
  40. N.B.Balamurugan, Synthesis, Fabrication Techniques and Applications of high performance Silicon Nanowire Transistors, ICMAT2011,Singapore, 26th June to 1st July,2011
  41. N.B.Balamurugan, A 2D Analytical surface potential model of multigate Silicon Nanowire Transistors for Biosensor Applications, ICMAT2011,Singapore, 26th June to 1st July,2011
  42. N.B.Balamurugan, Compact Thermal Noise modeling for Submicron MOSFETs , ICCOS’11 Karunya university, Coimbatore. 17th to 18th Mar2011 ,
  43. N.B.Balamurugan, Analytical model for deep submicron MOSFETs thermal noise, DSC2011 Muthayammal college of engg and Tech, Rasipuram, 26th Feb2011,
  44. N.B.Balamurugan, 2D Analytical charge density model for Double Gate MOSFET including Quantum Mechanical Effects, DSC2011 Muthayammal college of engg and Tech, Rasipuram, 26th Feb2011 ,
  45. N.B.Balamurugan, Analytical model for deep submicron MOSFETs thermal noise, DSC2011 Muthayammal college of engg and Tech, Rasipuram, 26th Feb2011,
  46. N.B.Balamurugan, FPGA Synthesis of SIRM Fuzzy System Classication, ICMOC 2012 Noorul Islam Centre,
  47. N.B.Balamurugan, A 2D Approach of Partially depleted Dual material MOSFETs for Reduced short channel effects, NANO 2010,K.S.Rangasamy College of Technology, 13th to 16th Dec 2010
  48. N.B.Balamurugan, Modeling of Nanoscale Double gate MOSFET, NANO 2010,K.S.Rangasamy College of Technology, 13th to 16th Dec 2010
  49. N.B.Balamurugan, A 2D Analytical Surface Potential Model For Dual Material Gate Mosfets With Reduced Short Channel Effects, ICON 2010, 2010
  50. N.B.Balamurugan, Performance analysis of dual-material gate MOSFETs for reduced short channel effects, ETWT2010, 2010
  51. N.B.Balamurugan, Two Dimensional Analytical Modeling of a Nanoscale Dual Material Gate MOSFETs, MiNDSS 2010 , 2010
  52. N.B.Balamurugan, Technology Assessment of Hybrid Approaches to the Fabrication of High Performance Silicon Nanowire Transistors, ETWT2010, 2010
  53. N.B.Balamurugan, Silicon-On-Nothing (SON) An Innovative Architecture for Advanced CMOS: A Review, ETWT2010, 2010
  54. N.B.Balamurugan, Dsigital Signal processing Lab Manual, DSP,
  55. N.B.Balamurugan, Signals and Systems Lab Manual, DSP,
  56. N.B.Balamurugan, A New Analytic Description Of Short-Channel Effects In Fully Depleted Single Gate Soi Mesfets For Low Power Vlsi Applications, Proceedings Of The National Conference On Signal Processing Communication And Networking(ICNSPC), 2007
  57. N.B.Balamurugan, Two Dimensional Analytical Modeling Of Dual Material Surrounding Gate Mosfets For Nanoscale Cmos Applications, International Conference On Materials For Advanced Technologies (ICMAT), Singapore, 2007
  58. N.B.Balamurugan, A New Scaling Theory For Nanoscale Fully Depleted Dual Material Surrounding Gate Mosfets, Proceedings Of The National Conference Of Nanoscale Devices And Systems(Nds ), 2007
  59. N.B.Balamurugan, A Novel Scaling Theory For Dual Material Surrounding Gate Nanoscale Mosfets, International Conference On Materials For Advanced Technologies (ICMAT) , Singapore, 2007
  60. N.B.Balamurugan, A New Scaling Theory For Fully Depleted Soi Dual Material Surrounding Gate Nano-Scale Mosfets: Including Effective Conductive Path Effect, IEEE Indicon , 2007
  61. N.B.Balamurugan, Threshold Voltage Model Of Short Channel Gaas Opfet For Optical Communication System, Nce-12,Tce, 2005
  62. N.B.Balamurugan, Time Dependent Anaylsis Of An Opfet Using Monte Carlo Simulation, Xxx Optical Society Of India Symposium , 2005
  63. N.B.Balamurugan, Numerical Simulation Of Switching Characteristics Of Gaas Opfet, Xxx Optical Society Of India Symposium , 2005
  64. N.B.Balamurugan, I-V Character Tics Of A GaAs Mesfet Photo Detector For Oeic Photo Receivers, Applied Photonics Superresolution And Photonics, 2005
  65. N.B.Balamurugan, Time Dependent Behaviour Of An Ion-Implanted Generalised Model Of Gaas Opfet, NCE-12,TCE, 2005
  66. N.B.Balamurugan, Capacitance Model Of Ion Implanted Opfet, Applied Photonics Superresolution And Photonics, 2005
  67. N.B.Balamurugan, A Monte Carlo Simulation Of An Ion-Implanted Gaas Opfet, Xxx Optical Society Of India Symposium , 2005
  68. N.B.Balamurugan, Spice Modelling Of an Ion-Implanted Gaas Opfet, Optical Society Of India Symposium , 2005
  69. N.B.Balamurugan, Two Dimensional Analytical Modelling Of Drain Induced Barrier Lowering Of Fully Depleted Short- Channel Soi Mesfets, Opto electronic Materials And Thin Films For Advanced Technology, 2005
  70. N.B.Balamurugan, Current- Voltage Character Tics Of A Low Pinch Off Voltage Voltage Gaas Mesfet, Nce-12,Tce, 2005
  71. G.Lakshmi Priya, S.Manikandan, N.B.Balamurugan, S.Theodore Chandra "A Novel Scaling Theory for Single gate AlInSb/InSb High Electron Mobility Transistors", ICCNT'2014,Mepco Schlenk Engineering College, Sivakasi,December 18-19,2014
  72. Dr. N.B. Balamurugan, M.Hemalatha 2D Modelling and Simulation of Triple Material Surrounding Gate Junctionless MOSFETs for suppressing short channel effects.International Conference On Contemporary Engineering and Technology,11th April 2021, prince shri venkateshwara padmavathy engineering college, Chennai.
  73. Dr.N.B.Balamurugan, G.Raja Gowri ,S.P.Murshidhabegum, M.Venkatesh "Analytical Modeling and simulation of Triple Material Surrounding Gate Stack Tunnel Field Effect Transistors" NCCT ’16 National conference on Communication Technologies, March- 23,2016, MEPCO Schlenk Engineering College
  74. Dr. N.B Balamurgan, A 2D Analytical Modeling Of Dual Material Surrounding Gate Junctionless Tunnel Field Effect TransistorInternational Conference On Microwave and Optical Communication,2nd March 2017, Alagappa Chettiar College Of Engineering And Technology, Karaikudi.
  75. N.B.Balamurugan, Modeling the Inversion Charge Centroid in Tri-Gate MOSFETs including Quantum Effects, ICEVENT2013,
  76. N.B.Balamurugan, High performance double gate Silicon Nanowire Transistors, ICEVENT2013,
  77. N.B.Balamurugan, Performance analysis and threshold voltage modeling of surrounding gate Silicon Nanowire Transistors, ICEVENT2013,
  78. N.B.Balamurugan, Potential and Electric field model for 18nm SG Tunnel Field Effect Transistor, ICEVENT2013,
  79. N.B.Balamurugan, Parameter Extraction for single electron transistor based on master equation approach , ICEVENT2013,
  80. N.B.Balamurugan, Quantum Centroid Modeling for Surrounding Gate MOSFETs, CODIS2012 Jadavpur University Kolkata,
  81. N.B.Balamurugan, FPGA Synthesis of SIRM Fuzzy System Classication of Diabetil Epilepsy Risk Level, ICMOC,
  82. N.B.Balamurugan, Electrical Characteristics of silicon and Germanium Nanowire transistors-A simulation study, CODIS2012 Jadavpur University Kolkata, 200

Books

  1. Jothi sangeeth, N B Balamurugan, Parameter Evaluation of Diabetic Neuropathy, Lambert publications
  2. NB Balamurugan , Analytical Modeling of High Electron Mobility TransistorsHandbook for III-V High Electron Mobility Transistor Technologies, 173
  3. VDAT 2018 Proceedings ,Springer CCIS,S.Rajaram,N.B.Balamurugan,D.Gracia Nirmala Rani
  4. Digital Signal processing Lab Manual, National Instruments, Bangalore - 2010
  5. Signals and Systems Lab Manual, National Instruments, Bangalore-2009

Industry Interactions

COMPANY NAME NATURE OF WORK PERIOD DETAILS
National Instruments, Bangalore - 23-03-2009 to 27-03-2009 Training Programme on LABVIEW Basics I &II
Texas Instruments, Bangalore Conducted similar Training Programme for B.E students. 03-12-2007 to 07-12-2007 Training Programme on Analog System Design using ASLKv2010 Starter Kit

Sponsored Research

TITLE SPONSORING AGENCY AMOUNT RESPONSIBILITY
Modeling and Simulation of High Electron Mobility Transistors(HEMTs) for High Frequency CMOS Applications AICTE 16 lakhs Principal Investigator
Modeling and Simulation of Multigate nanowire transistors for low power CMOS Application AICTE 10.3 lakhs PI
Analytical modeling and simulation of quantum mechanical effects in multigate MOSFETs DST 25.1 Lakhs Mentor

Seminar, Conference, Workshop Attended

  1. Faculty Development Programme on" Next Generation Electronic Devices" organized by Univesity of Jammu,, 22-03-2022 to 01-01-0001
  2. Bangalore INDIA NANO conference on "Nanotechnology", Bangalore, India,, 07-03-2022 to 09-03-2022
  3. 35th International Conference on VLSI Design and 21st International Conference on Embedded Systems (VLSID 2022), , 26-02-2022 to 02-03-2022
  4. Faculty Development Programme on "Wireless communication" organized by TCE, Madurai.24.01.2022, 31-01-2022 to 01-01-0001
  5. Online FDP on "Remote Acess to Intel FPGAs & SoCs for Embedded System Design" organized by SASTRA Deemed to be University,in association with Intel Technologies Ltd, Bangalore., 11-11-2021 to 13-11-2021
  6. AICTE sponsored One week traning programme on "Emerging Trends in VLSI Technology",Secunderabad,India,, 14-06-2021 to 19-06-2021
  7. TEQIP III Sponsored workshop on VLSI BASED SYSTEM DESIGN.IIITG,Guwahati, , 12-03-2021 to 14-03-2021
  8. 34 th International conference on VLSI Design, IIITG, Guwahati, , 20-02-2021 to 24-02-2021
  9. Capacity Building Workshop for the Development of TCE Online Courses, 30-01-2021 to 30-01-2021
  10. Capacity Building Workshop for the Development of TCE Online Courses Part -I, 23-01-2021 to 23-01-2021
  11. TEQIP-III Sponsored Two day Faculty Development Programme on “Design, Develop and Deliver online courses through MOODLE platform”, Department of Technical Education State Project Implementation Unit, Tamil Nadu & Coimbatore Institute of Technology, Coimbatore., 23-04-2020 to 24-04-2020
  12. TEQIP Sponsored Two Weeks online certification Course on "Digital Transformation in Teaching Learning Process" , offered by IIT Bombay, Funded by the Ministry of HRD, Govt of India., 06-04-2020 to 22-04-2020
  13. 33rd International conference on VLSI design,Bengaluru, India, 04-01-2020 to 08-07-2020
  14. AICTE-QIP Sponsored Two week short term course on "5G Wireless Communications" , 28-01-2019 to 10-02-2019
  15. 32nd International conference on VLSI Design ,New Delhi,India, 05-01-2019 to 09-01-2019
  16. AICTE-QIP sponsored one week Short Term Course on “Vision Based Robot Navigation & Manipulation” - TCE ,Madurai, 22-01-2018 to 28-01-2018
  17. 31st International conference on VLSI design, Pune, -India, 06-01-2018 to 10-01-2018
  18. AICTE-QIP sponsored one week STTP on “Array Signal Processing in Radar & Wireless Communications,TCE,Madurai, 04-12-2017 to 10-12-2017
  19. Intellectual Property Rights and Innovations ,TCE,Madurai, 06-10-2017 to 06-10-2017
  20. Engineering Education & Research Seminar , National Instruments, India,Organized by TCE, Madurai, 30-03-2017 to 30-03-2017
  21. Two Week ISTE STTP on CMOS,Mixed signal and Radio frequency VLSI , IIT Kharagpur, India,Organized by TCE,Madurai, 30-01-2017 to 04-02-2017
  22. 30th International conference on VLSI design, Hyderabad,India, 09-01-2017 to 13-01-2017
  23. 29th International Conference on VLSI Design and 15th International Conference on Embedded Systems,Kolkatta,India, 04-01-2016 to 08-01-2016
  24. TEQIP II Sponsored Workshop on 'Physics in Engineering' organized by the department of Physics, 05-11-2015 to 06-11-2015
  25. TEQIP sponsored Faculty Development program on Assesment and Evaluation : Principles and Practices,TCE Madurai,, 02-11-2015 to 04-11-2015
  26. TEQUIP sponsored workshop on Good Learning, TCE Madurai,, 02-06-2015 to 04-06-2015
  27. 28th International Conference on VLSI Design, Banglore, India, 03-01-2015 to 07-01-2015
  28. Cadence Tools Training on Analog and Digital Design Flow conducted by Cadence, TCE, Madurai 625015, 11-12-2014 to 12-12-2014
  29. Alumni Relations Conference - India at Indian School of Business,Hyderabad Campus, 01-11-2014 to 01-11-2014
  30. 27th International conference on VLSI design, IITBombay, Mumbai,India, 05-01-2014 to 10-01-2014
  31. Fundamentals of C programming, TCE, Madurai, 09-12-2013 to 09-12-2013
  32. TEQUIP sponsored workshop on Outcome based Education, TCE, Madurai., 12-11-2013 to 13-11-2013
  33. NI Education Day, Chennai, 16-10-2012 to 17-10-2012
  34. Mission 10X workshop, THIAGARAJAR COLLEGE OF ENGINEERING, MADURAI, 22nd -26th Aug-2011
  35. IFRIO Transceiver, THIAGARAJAR COLLEGE OF ENGINEERING, MADURAI, 24th-27th Jan-2011
  36. 24th International Conference on VLSI Design, IIT,Chennai, 1st and 2nd Jan-2011
  37. NI Education Day Conducted by National Instruments, Bangalore 14th Dec-2010, 14-12-2010 to 01-01-0001
  38. Faculty Development Program on Analog Sysytem Design, Texas Instruments,Bangalore., 15th to 19th November,2010
  39. ADVANCED GRAPHICAL SYSTEM DESIGN WITH LABVIEW II, INFOSYS MYSORE CENTER, 6th July 10th July, 2009 5 Days
  40. LABVIEW BASICS I&II TRAINING COURSE, NATIONAL INSTRUMENTS BANGALORE, 23rd -27th March, 2009 5 Days
  41. NATIONAL INSTRUMENTS LABVIEW AND ELVIS, THIAGARAJAR COLLEGE OF ENGINEERING, MADURAI, 28th April 2nd May 2008 5 Days
  42. ADVANCED VLSI DESIGN, HUBLI, 15th -29th December,2007 15 Days
  43. VLSI DESIGN, TEXAS INSTRUMENTS, BANGALORE, 3rd-7th Decmber, 2007 5 Days
  44. ANALOG VLSI DESIGN, THIAGARAJAR COLLEGE OF ENGINEERING, MADURAI, 4th -15th June, 2007 12 Days
  45. NANOTECHNOLOGY CURRENT STATUS AND CHALLENGES , IITD, DELHI, 17th and 18th March, 2007 2 Days
  46. FIBEROPTIC COMMUNICATION DEVICES, SYSTEMS AND NETWORKS, INDIAN INSTITUTE OF SCIENCE, BANGALORE, 2005
  47. VHDL &FPGA DESIN FOR WIRELESS BASEBAND SYSTEMS, THIAGARAJAR COLLEGE OF ENGINEERING, MADURAI, 2005
  48. PRIMER COURSE IN BIOMEDICAL ENGINEERING, INDIA INSTITUTE OF TECHNOLOGY , CHENNAI, May 31-June 5 2004
  49. NEURO FUZZY EXPERT SYSTEMS , ACCET,  KARAIKUDI, 9-6-03 to 23-6-03
  50. OPTOELECTRONICS INTEGRATED CIRCUITS PHOTORECEIVERS & SYSTEMS , PSNAECT,DINDUGAL, 24th and 25th January 2003
  51. ARCHITECTURE AND PROGRAMMING OF DIGITAL SIGNAL PROCESSORS, ANNA UNIVERSITY,CHENNAI, 10th and 13th April 2002
  52. WAVELETS AND THEIR APPLICATIONS , ANNA UNIVERSITY, CHENNAI, January 4-8 2002
  53. WAVELETS AND ITS APPLICATION IN SIGNAL PROCESSING, REC,CALICUT, 16 -27 July 2001
  54. OPTOELECTRONICS,FIBER OPTICS AND PHOTONICS, INTERNATIONAL SCHOOL OF PHOTONICS,CUSAT & NEST PHOTONICS, KOCHI, 9-11 December
  55. NI Education Day, Chennai.,
  56. 32nd International conference on VLSI design, Delhi, -India,05-01-2019 to 09-01-2019 , 01-01-0001 to 01-01-0001

Seminar, Conference, Workshop Organised

  1. Workshop on " VLSI Circuits Design and Device Modeling: Recent Trends and Advancements", TCE, Madurai, 11-11-2021 to 13-11-2021
  2. Workshop on Introduction to Various types of signals.TCE, Madurai , 03-02-2021 to 03-02-2021
  3. AICTE Sponsored STTP on " Challenges and Opportunities in Nano Electronics and VLSI Nano electronic Device" TCE, Madurai , 18-11-2019 to 23-11-2019
  4. AICTE sponsored A Three Day National Seminar on "Research Issues and opportunities in VLSI and Nanoelectronic device, 12-04-2019 to 14-04-2019
  5. 22nd International Symposium on " VLSI Design and Test (VDAT 2018)" , TCE Madurai, 28-06-2018 to 30-06-2018
  6. TEQIP – III sponsored One Week Faculty Development Programme (FDP) on “Design,Modeling,Simulation & Analysis of Advanced Electronic Circuits,TCE, Madurai, 08-11-2017 to 14-11-2017
  7. TEQIP – II sponsored Two Weeks Faculty Development Programme (FDP) on “CMOS VLSI System Integration : Design, Analysis, Implementation & Simulation”,TCE, Madurai, 12-12-2016 to 25-12-2016
  8. TEQIP sponsored One Week workshop on “Electronic Circuits: Theory & Practice”, 23-05-2016 to 29-05-2016
  9. Two day Workshop on Analog and Digital System Design using Cadence Tools, TCE MADURAI, 27-02-2016 to 28-02-2016
  10. Training Programme on LAB VIEW , TCE MADURAI, 20-02-2016 to 21-02-2016
  11. Two day Workshop on Analog and Digital System Design using Cadence Tools, TCE MADURAI, 30-01-2016 to 31-01-2016
  12. Training Programme on LAB VIEW, TCE MADURAI, 23-01-2016 to 26-01-2016
  13. Training Programme on LAB VIEW , TCE Madurai.,, 28-12-2015 to 31-12-2015
  14. TEQIP sponsored One Week workshop on “Semiconductor Devices: Theory & Practice”,TCE,Madurai,, 30-11-2015 to 06-12-2015
  15. Two days Training Programme on Simulation of Semiconductor Devices using PSPICE, TCE Madurai, 21-02-2015 to 22-02-2015
  16. Two Days Workshop on Solid State Device Modeling and Simulation, TCE, Madurai, 11-11-2014 to 12-11-2014
  17. Two days Training Programme on Analog System Design Using ASLKv2010 Starter Kit, TCE,Madurai , 25-10-2014 to 26-10-2014
  18. Training Programme on LABVIEW, Thiagarajar College of Enginnering, Madurai, 02-06-2014 to 05-06-2014
  19. IEEE EDS Mini colloquia on Past, Present and Future of Nano CMOS Technologies, TCE,madurai, 27-12-2013 to 28-12-2013
  20. Anna University, Chennai Sponsored Faculty Development Training Programme on EC 2251- Electronic Circuits-II, 11-12-2013 to 17-12-2013
  21. TEQIP Sponsored Two days workshop on Computer Aided Design of Simulation of Electronic Circuits, TCE, Madurai, 21-11-2013 to 22-11-2013
  22. Two Days seminar on Analysis and Design of Analog Integrated Circuits, TCE, Madurai, 03-05-2013 to 04-05-2013
  23. Training Programme on LabVIEW, TARC SEMINAR Hall, 27-12-2012 to 30-12-2012
  24. Workshop on Solid State Device Modeling, 17-12-2012 to 18-12-2012
  25. Training Programme on Analog System Design using ASLKv2010 Starter Kit, 29-09-2012 to 30-09-2012
  26. Training course on Lab View, Thiagarajar College Of Engineering,Madurai, 07-09-2012 to 08-09-2012
  27. Training Programme on Analog System Design using ASLKv2010 Starter Kit, 07-09-2012 to 08-09-2012
  28. Training course on Lab View, Thiagarajar College Of Engineering,Madurai, 08-08-2012 to 11-08-2012
  29. Training course on Lab View, Thiagarajar College Of Engineering,Madurai, 06-06-2012 to 09-06-2012
  30. Training course on Lab View, Thiagarajar College Of Engineering,Madurai, 02-01-2012 to 05-01-2012
  31. Training course on Lab View, Thiagarajar College Of Engineering,Madurai, 19-12-2011 to 22-12-2011
  32. Training course on Lab View, Thiagarajar College Of Engineering,Madurai, 06-12-2011 to 09-12-2011
  33. Workshop on Solid State Device Modeling and Simulation, Thiagarajar College Of Engineering,Madurai, 4th and 5th Nov,2011
  34. Training course on Lab View, Thiagarajar College Of Engineering,Madurai, 5th to 8th Jan-2011
  35. Workshop on 3D System Design and Device Modeling, Thiagarajar College Of Engineering,Madurai, 29th and 30th Dec-2010
  36. Training course on Lab View, Thiagarajar College Of Engineering,Madurai, 20th to 23rd Dec-2010
  37. Workshop on Solid State Device Modeling, Thiagarajar College Of Engineering,Madurai, 26th to 28th November,2010
  38. Training course on LabView, Thiagarajar College Of Engineering,Madurai, 10th to 13th November,2010
  39. National Conference on " Emerging Trends in Wireless Technologies (ETWT 2010)", Thiagarajar College of Engineering, Madurai , 23-07-2010 to 24-07-2010
  40. An Intensive Training Program on Lab View , Thiagarajar College Of Engineering,Madurai,
  41. Course on Proficiency in LabVIEW, Thiagarajar College Of Engineering,Madurai, 2009
  42. AICTE sponsored Two Weeks workshop on Adaptive Signal Processing and their application to speech processing, RVSCET, Dindigul, 3rd -15th May, 2004
  43. Adaptive Signal processing and their application to speech processing, RVSCET, Dindigul, 3.5.2004 - 15.5.2004 , 13 days
  44. Digital Signal Processing, RVSCET, Dindigul, 28.6.2003-29.6.2003 , 2 days
  45. Advanced Digital Signal Processing, RVSCET , Dindigul, 9.8.2002-10.8.2002 , 2 days
  46. Proficiency in lab view, Thiagarajar College Of Engineering,Madurai,
  47. VLSI Circuits Design and Device Modeling: Recent Trends and Advancements, TCE, Madurai, 11-11-2021 to 13-11-2021, 01-01-0001 to 01-01-0001

Ph.D Guidance/Supervisorship

NAME OF SCHOLAR COURSE AREA OF RESEARCH STATUS
P.Suveetha Dhanaselvam Ph.D Compact modeling and simulation of Triple material Surrounding gate MOSFETsFETs Completed
P.Vimala Ph.D Quantum Mechanical Effects in Multigate MOSFETs Completed
T.S.Arun Samuel Ph.D Analysis and Design of Multigate TFET for low power applications Completed
B.Buvaneswari Ph.D Analytical Modeling and Simulation of Multigate MOSFETs Completed
M.Venkatesh Ph.D Design and Analysis of Halo Doped Tunnel Field Effect Transistors With High-K Dielectric Materials For Ultra Low Power Applications Completed
K.Sowmya Ph.D Analytical Modeling of Silicon Nanowire Transistors Completed
T.Venish Kumar Ph.D Analytical Modeling and Simulation of Multi-Gate MOSFETs Completed
V.Dharshana Ph.D Analytical Modeling And Simulation of Dual Material Surrounding Gate Tunnel FET with Stacked Gate Oxide Completed
S.Manikandan Ph.D Compact modeling and simulation of Multi gate Junctionless Transistors Completed
M.Karthigai Pandian Ph.D Analytical Modeling and Simulation of Advanced Surrounding Gate Silicon Nanowire Transistors Completed
L.Sheela Ph.D Analysis and Simulation of Single Electron Transistors Completed
S.Theodore Chandra Ph.D Analytical Modeling and Simulation of HEMT Completed
D.Saraswathi Ph.D Analytical Modeling and Simulation of Tri Material Gate All Around Silicon Nanowire TFETs Completed
G.Lakshmi Priya Ph.D Analytical Modeling And Simulation of Dual Material Surrounding Gate Tunnel FET with Stacked Gate Oxide Completed
I. Sheik Arafat Ph.D Modeling,Simulation,Analysis of certain scattering effects in Silicon Nanowire Transistors Completed
P.Vanitha Ph.D Tunnel Field Effect Transistors Completed
M.Jothi Ph.D Design and Simulation of VLSI fuzzy Processing Completed
S.Preethi Ph.D Analytical Modeling and Simulation of Multi – Gate MOSFETs Completed
B. Jasmine Priyadharshini Ph.D 2D analytical modeling and simulation of multigate MOSFET for 5G apllications. Ongoing
S. Rajkumar Ph.D Analytical and Simulation Modeling of Multigate High Electron mobility Transistors. Ongoing
M Hemalatha Ph.D Analytical Modeling and Simulation of Multigate MOSFETs Ongoing

Lectures Delivered

TOPIC DELIVERED AT PERIOD
New Trends in VLSI Device Modeling for Real Time Application. Bannariamman Institute of Technology 09-10-2021 to 09-10-2021
TFET as Biosensors theory and modelling Approches Harcourt Butler Technical University 05-07-2021 to 09-07-2021
MOSFET Based BIOSENSORs for Healthcare Applications P.S.R Engineering College 07-06-2021 to 11-06-2021
Modern teaching Learning Tools and Methodologies in Engineering and Technology Education Francis Xavier Engineering College 09-11-2019 to 09-11-2019
Recent Developments in Health care Technologies using Modern VLSI Devices National Engineering College, Kovilpatti 01-02-2019 to 01-02-2019
Two Port parametric Converison Anna University Madurai 20-12-2018 to 20-12-2018
Mathematical Method and Techniques in analog VLSI Device Modeling Alagappa Chettiar College of Engg & Tech ,Karaikudi 19-12-2018 to 19-12-2018
VLSI Design for Wireless Communication – Milestones & Challenges Sethu Institute of Technology 19-07-2018 to 19-07-2018
Use of ICT Tools for effective teaching methodology Francis Xavier Engineering College 19-06-2018 to 19-06-2018
VLSI Device Modeling IIT – Kanpur , India 02-05-2018 to 02-05-2018
Multi gate Transistors & Special Diodes K.L.N. College of Engineering 31-03-2018 to 31-03-2018
Data Converters M.Kumarasamy College of Engineering,Karur 10-02-2018 to 10-02-2018
VLSI Device Modeling : Research Perspective K.L.N. College of Information Technology 27-01-2018 to 27-01-2018
Nanotechnology based VLSI Physical design Francis Xavier Engineering College 08-12-2017 to 08-12-2017
Electronic Circuits K.L.N College of Engineering 14-10-2017 to 14-01-2018
Quick Tour on VLSI Design PSNA College of Engineering and Technology 07-09-2017 to 07-09-2017
Relative Grading System Bannari Amman Institute of Technology 17-08-2017 to 17-08-2017
Linear Integrated Circuits M.Kumarasamy College of Engineering,Karur 27-01-2017 to 27-01-2017
Design Security Algorithm for Xilinx FPGA SNS College of Engineering, Coimbatore 03-09-2016 to 03-09-2016
Multiscale Modeling of Nanoelectronic Devices – A Research Prespective PSG College of Technology,Coimbatore 27-07-2016 to 27-08-2016
Research Issues in Analog VLSI Device Modeling Anna University Trichy 16-06-2016 to 16-08-2016
Advances in VLSI, Embedded and Neuroscience in Medical systems PSNA College of Engineering and Technology 12-04-2016 to 12-04-2016
Recent Research Trends in VLSI Technology PSNA College of Engineering and Technology,Dindigul 17-03-2016 to 17-03-2016
Virtual Instrumentation M.Kumarasamy College of Enginnering,Karur 03-03-2016 to 03-03-2016
Applications of Operational Amplifiers M.Kumarasamy College of Engineering,Karur,TamilNadu 27-01-2016 to 27-01-2016
Designing of Combinational Logic Circuits SriGuru Institute of Technology,Coimbatore 14-12-2015 to 14-12-2015
Analog VLSI Design SSM Institute of Engineering and Technology, Dindigul. 11-11-2015 to 11-11-2015
Linear Integrated Circuits and Systems KLN College of Engineering, Sivagangai 15-06-2015 to 15-06-2015
Modelling of Devices Regional Office Anna University Tirunelveli Region 19-03-2015 to 19-03-2015
Electronics Circuits II Theni Kammavar Sangam College of Engineering, Theni 05-03-2015 to 05-03-2015
Power Amplifiers SCAD Engineering College, Tirunelveli 05-11-2014 to 05-11-2014
Advanced Analog VLSI Devices CARE, Trichy 04-12-2013 to 04-12-2013
Simulation of Electronic Circuits Francis Xavier Engineering college, Tirunelveli 19-11-2013 to 19-11-2013
Hands on training programme on Labview Anna University Tiruneveli region ,Tirunelveli 05-11-2013 to 05-11-2013
Simulation of Circuits and Systems Srinivasan College of Engineering and Technology, Perampulur, Trichy 25-10-2013 to 25-10-2013
VLSI Solid State Device Modeling and Simulation KPR Institute of Technology, Coimbatore 21-10-2013 to 22-10-2013
Application of Electronic Circuits II Kumarasamy College of Engineering & technology, Karur 23-09-2013 to 23-09-2013
Future of NanoCMOS Technology Sardar Raja Colleg of Engineering and Technology, Alangulam 30-08-2013 to 30-08-2013
VLSI Design Bharath Niketan Engineering College 23-08-2013 to 23-08-2013
Application of Electronic Circuits I Kumarasamy College of Engineering & technology, Karur 23-07-2013 to 23-07-2013
Advanced VLSI Devices National Engineering College 16-07-2013 to 16-07-2013
VLSI Device Modeling Jeyaram Engineering College 21-05-2013 to 21-05-2013
VLSI Device Modeling Srinivasan Engineering College, Perampular 17-05-2013 to 17-05-2013
Wireless Communication Anna University Regional Centre , Madurai 17-04-2013 to 18-09-2016
Introduction to VLSI Devices PGP College of Engineering and Technology, Namakkal 28-02-2013 to 28-02-2013
VLSI & Nanotechnolgy SKP Engineering College,Tiruvannamalai 07-01-2013 to 09-09-2016
VLSI & Nanotechnolgy SKP Engineering College,Tiruvannamalai 07-01-2013 to 09-09-2016
CMOS Technology Anna University Regional Centre,Coimbatore 12-12-2012 to 18-09-2016
CMOS VLSI Anna University, Coimbatore one week Faculty development programme on VLSI Design
EKV MOSFET Modelling Senkunthar Engineering college
BenchMark Circuits and Quality Assurance Senkunthar Engineering college, Tiruchengode
Effects and Modeling of Process Variation and Device Mismatch KPR Institute of Technology, Coimbatore. 18-11-2012 to 18-11-2012
EKV MOSFET Model KPR Institute of Technology, Coimbatore
Distortion Analysis of MOSFETs Srinivasan Engineering College, Perambalur. 06-10-2012 to 06-10-2012
Noise Modeling of MOSFET Dr.Sivanthi Aditanar College of Engineering, Tiruchendur. 03-10-2012 to 03-10-2012
Recent Development of VLSI in Health Care Application PSNA College of Engineering and Technology, Dindigul. 24-08-2012 to 24-08-2012
Research issues in VLSI device Modeling SBMCE 08-08-2012 to 08-08-2012
Research issues in VLSI Device modelings Karunya University, Coimbatore
Modeling of VLSI Devices MCET, Kerala
Modeling of Semiconductor Devices -a basic view Sudharsan Engineering College, Tiruchirappalli.
Research issues in VLSI Device modelings MIET Engineering College, Trichy
Fundamentals of Device Modeling Sethu Institute of Technology 18th Nov,2011
Labview for Beginners NPR College of Engineering,Dindigul - 624 003. 16.08.2011
VLSI Device Modeling Pandian Saraswathi Yadav Engineering College, Sivagangai 28th March,2011
VHDL Design Ultra College of Engineering and Technology for Women, Madurai 23rd March,2011
Noise Modeling in Multigate MOSFETs Sethu Institute of Technology 12th Dec,2010
Advanced Device Modeling and Simulation Methods Sethu Institute of Technology 11th Dec,2010
Nanoscale Device Modeling Francis Xavier Engineering College,Tirunelveli 22,October,2010
Recent trends in VLSI Technology Velammal College of Engineering and technology, Madurai 1.10.2010
Recent trends in Modern Electronics Capes Institute of Technology, Nagarcoil. 12th Aug,2010
Recent trends in Micro Electronics Velammal College of Engineering and Tech, Madurai. 1st April, 2010
Design of blocking oscillator Velammal College of Engineering and Tech, Madurai. 20th December, 2009

Membership

NAME OF SOCIETY DETAILS PERIOD
ISTE Life Member (LM 31045) 14.07.2001
IEEE (EDS) Senior Member 90837460 2010